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SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity
Yuexin Gao Xiaowu Cai Zhengsheng Han Yun Tang Liqiang Ding
Ruirui Xia Mali Gao Fazhan Zhao
Vol. 23, No. 5, pp. 779-788, May 2023
10.1007/s43236-022-00570-3
Ruirui Xia Mali Gao Fazhan Zhao
Vol. 23, No. 5, pp. 779-788, May 2023
10.1007/s43236-022-00570-3
ISSN : 1598 - 2092
eISSN : 2093 - 4718